BSC010N04LSATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BSC010N04LSATMA1
Manufacturer

Infineon
ChipWorker Part#

CW1782837
Category

MOSFET, MOSFET Transistor
Package

PG-TDSON-8
Description

TDSON N-CH 40V 100A
Documentation

Datasheet

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BSC010N04LSATMA1 Specifications

Attribute	Attribute Value

Part Number	BSC010N04LSATMA1
Manufacturer	Infineon
ChipWorker Part#	CW1782837
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PG-TDSON-8
Power Rating	139 W
Number of Positions	8 Position
Polarity	N-Channel
Power Dissipation	139 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	40 V
Continuous Drain Current (Ids)	100A
Rise Time	12 ns
Input Capacitance (Ciss)	6800pF @20V(Vds)
Input Power (Max)	2.5 W
Fall Time	9 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta), 139W (Tc)
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Size-Length	6.1 mm
Size-Width	5.35 mm
Size-Height	1.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The BSC010N04LS is a 40V N-channel Power MOSFET optimized for synchronous rectification. This MOSFET features not only the industry"s lowest RDS (on) but also a perfect switching behaviour for fast switching applications. 15% lower RDS (on) and 31% lower Figure of Merit (RDS (on) x Qg) compared to alternative devices has been realized by advanced thin wafer technology. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
Highest system efficiency
Less paralleling required
Increased power density
Saving space
Very low voltage overshoot
Superior thermal resistance
Due to technical requirements, component may contain dangerous substances.

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