BSC098N10NS5ATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BSC098N10NS5ATMA1
Manufacturer

Infineon
ChipWorker Part#

CW16344333
Category

MOSFET, MOSFET Transistor
Package

PG-TDSON-8
Description

TDSON N-CH 100V 60A
Documentation

Datasheet

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BSC098N10NS5ATMA1 Specifications

Attribute	Attribute Value

Part Number	BSC098N10NS5ATMA1
Manufacturer	Infineon
ChipWorker Part#	CW16344333
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PG-TDSON-8
Power Rating	69 W
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	8.2 mΩ
Polarity	N-Channel
Power Dissipation	69 W
Threshold Voltage	2.2 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	60A
Rise Time	5 ns
Input Capacitance (Ciss)	1600pF @50V(Vds)
Fall Time	4 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta), 69W (Tc)
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Size-Length	5.9 mm
Size-Width	5.15 mm
Size-Height	1.27 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Summary of Features:
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 43% from previous generation
Benefits:
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Target Applications:
Telecom
Server
Solar
Low voltage drives
Light electric vehicles
Adapter

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