BST39TA ,BJT Transistor, BJT - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Popularity Score

85 points

Part No

BST39TA
Manufacturer

Diodes
ChipWorker Part#

CW13199440
Category

BJT Transistor, BJT
Package

SOT-89-3
Description

Trans GP BJT NPN 350V 0.5A 2000mW Automotive 4Pin(3+Tab) SOT-89 T/R
Documentation

Datasheet
Ships from

Moscow
Наличие

8 pcs In Stock
Estimated Price

$ 0.1

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BST39TA Specifications

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Attribute	Attribute Value

Part Number	BST39TA
Manufacturer	Diodes
ChipWorker Part#	CW13199440
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-89-3
Voltage Rating (DC)	350 V
Current Rating	500 mA
Polarity	NPN
Power Dissipation	2000 mW
Breakdown Voltage (Collector to Emitter)	350 V
Continuous Collector Current	0.5A
hFE Min	40 @20mA, 10V
Input Power (Max)	1 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1000 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

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Product Description

Use this versatile NPN BST39TA GP BJT from Diodes Zetex to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 7 V.

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- Please check the technical specifications of the products when ordering.
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