BST39TA - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BST39TA
Manufacturer

Diodes
ChipWorker Part#

CW13199440
Category

BJT Transistor, BJT
RoHS

Lead free / RoHS Compliant
Description

Trans GP BJT NPN 350V 0.5A 2000mW Automotive 4Pin(3+Tab) SOT-89 T/R
Documentation

Datasheet

BST39TA Global Supplier

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BST39TA Specifications

Attribute	Attribute Value

Part Number	BST39TA
Manufacturer	Diodes
ChipWorker Part#	CW13199440
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-89-3
Voltage Rating (DC)	350 V
Current Rating	500 mA
Polarity	NPN
Power Dissipation	2000 mW
Breakdown Voltage (Collector to Emitter)	350 V
Continuous Collector Current	0.5A
hFE Min	40 @20mA, 10V
Input Power (Max)	1 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1000 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

Use this versatile NPN BST39TA GP BJT from Diodes Zetex to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 7 V.

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