CSD16327Q3 - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

CSD16327Q3
Manufacturer

TI
ChipWorker Part#

CW6845993
Category

MOSFET, MOSFET Transistor
Package

PowerTDFN-8
Description

VSON-CLIP N-CH 25V 21A
Documentation

Datasheet

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CSD16327Q3 Specifications

Attribute	Attribute Value

Part Number	CSD16327Q3
Manufacturer	TI
ChipWorker Part#	CW6845993
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PowerTDFN-8
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0034 Ω
Polarity	N-Channel
Power Dissipation	3 W
Threshold Voltage	1.2 V
Drain to Source Voltage (Vds)	25 V
Continuous Drain Current (Ids)	21A
Rise Time	15 ns
Input Capacitance (Ciss)	1300pF @12.5V(Vds)
Input Power (Max)	3 W
Fall Time	6.3 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3W (Ta)
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Size-Length	3.4 mm
Size-Width	3.4 mm
Size-Height	1.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance Edition	2015/06/15

Product Description

This 25-V, 3.4-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.

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