DRV5053VAQLPG - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

DRV5053VAQLPG
Manufacturer

TI
ChipWorker Part#

CW9282925
Category

Hall Effect Sensor
Package

TO-226-3
Description

Hall Effect Sensor Bipolar 3.3V/5V/9V/12V/15V/18V/24V 3Pin TO-92 Bulk
Documentation

Datasheet

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DRV5053VAQLPG Specifications

Attribute	Attribute Value

Part Number	DRV5053VAQLPG
Manufacturer	TI
ChipWorker Part#	CW9282925
Category	Hall Effect Sensor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-226-3
Supply Voltage (DC)	2.50V (min)
Output Current	2.3 mA
Number of Positions	3 Position
Bandwidth	20 kHz
Output Current (Max)	2.3 mA
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.5V ~ 38V
Supply Voltage (Max)	38 V
Supply Voltage (Min)	2.5 V
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Size-Length	4.1 mm
Size-Width	1.62 mm
Size-Height	3.25 mm
Operating Temperature	-40℃ ~ 125℃ (TA)
Product Lifecycle Status	Active
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The DRV5053VAQLPG is a 2.5 to 38V analogue bipolar chopper-stabilized Hall-effect Sensor that offers a magnetic sensing solution with superior sensitivity stability over-temperature and integrated protection features. The 0to 2V analogue output responds linearly to the applied magnetic flux density and distinguishes the polarity of magnetic field direction. A wide operating voltage range from 2.5 to 38V with reverse polarity protection up to -22V makes the device suitable for a wide range of industrial and consumer applications. Internal protection functions are provided for reverse supply conditions, load dump and output short-circuit or over-current.
No external regulator required
Open drain output 2.3mA sink
Fast 35µs power-on time
Reverse supply protection load dump
Output short-circuit protection
Output current limitation
Green product and no Sb/Br
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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- Anti-vibration foam
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