FD150R12RT4 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FD150R12RT4
Manufacturer

Infineon
ChipWorker Part#

CW118799340
Category

IGBT Transistor, IGBT Module
Package

-
Description

INFINEON FD150R12RT4 IGBT Array & Module Transistor, N Channel, 150A, 1.75V, 790W, 1.2kV
Documentation

Datasheet

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FD150R12RT4 Specifications

Attribute	Attribute Value

Part Number	FD150R12RT4
Manufacturer	Infineon
ChipWorker Part#	CW118799340
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	5 Pin
Case/Package	-
Power Rating	790 W
Number of Positions	5 Position
Polarity	N-Channel
Power Dissipation	790 W
Breakdown Voltage (Collector to Emitter)	1200 V
Input Capacitance (Cies)	9.3nF @25V
Input Power (Max)	790 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
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Operating Temperature	-40℃ ~ 150℃
Product Lifecycle Status	Active
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The FD150R12RT4 is a 34mm IGBT Module with fast Trench/Fieldstop IGBT4 and emitter controlled 4 diodes. Isolated base plate with standard housing, optimal electrical performance and VCEsat with positive temperature coefficient.
Extended operating temperature
Low switch losses
LowVCEsat
High reliability
Flexibility

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