FDB33N25 - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDB33N25
Manufacturer

Fairchild
ChipWorker Part#

CW448271176
Package

D2PAK
Description

Trans MOSFET N-CH 250V 33A 3Pin(2+Tab) D2PAK
Documentation

Datasheet

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FDB33N25 Specifications

Attribute	Attribute Value

Part Number	FDB33N25
Manufacturer	Fairchild
ChipWorker Part#	CW448271176
Documentation	Datasheet
Number of Pins	3 Pin
Case/Package	D2PAK
Polarity	N-CH
Drain to Source Voltage (Vds)	250 V
Continuous Drain Current (Ids)	33A
	expand all
Product Lifecycle Status	Unknown

Product Description

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
Features
• 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V
• Low gate charge ( typical 36.8 nC)
• Low Crss ( typical 39 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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