FDMC4435BZ - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDMC4435BZ
Manufacturer

Fairchild
ChipWorker Part#

CW14356850
Category

MOSFET, MOSFET Transistor
Package

Power-33
Description

FAIRCHILD SEMICONDUCTOR FDMC4435BZ MOSFET Transistor, P Channel, -18A, -30V, 0.015Ω, -10V, -1.9V
Documentation

Datasheet

FDMC4435BZ Global Supplier

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FDMC4435BZ Specifications

Attribute	Attribute Value

Part Number	FDMC4435BZ
Manufacturer	Fairchild
ChipWorker Part#	CW14356850
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	Power-33
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.015 Ω
Polarity	P-Channel
Power Dissipation	31 W
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	8.5A
Rise Time	6 ns
Input Capacitance (Ciss)	2045pF @15V(Vds)
Input Power (Max)	2.3 W
Fall Time	20 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.3W (Ta), 31W (Tc)
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Size-Length	3.3 mm
Size-Width	3.3 mm
Size-Height	0.75 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The FDMC4435BZ is a P-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. It is well suited for load switching applications common in portable battery packs.
High performance Trench technology for extremely low RDS (ON)
High power and current handling capability
100% UIL tested
>7kV Typical HBM ESD protection level

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