LM324D - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

LM324D
Manufacturer

TI
ChipWorker Part#

CW39650
Category

Operational Amplifier, OP Amp IC
Package

SOIC-14
Description

Operational Amplifier, Quad, 4 Amplifier, 1.2MHz, 0.5V/µs, 3V to 32V, ± 1.5V to ± 16V, SOIC
Documentation

Datasheet

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LM324D Specifications

Attribute	Attribute Value

Part Number	LM324D
Manufacturer	TI
ChipWorker Part#	CW39650
Category	Operational Amplifier, OP Amp IC
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	14 Pin
Case/Package	SOIC-14
Supply Current	1.4 mA
Number of Circuits	4 Circuit
Number of Channels	4 Channel
Number of Positions	14 Position
Common Mode Rejection Ratio	65dB ~ 80dB
Input Offset Drift	7.00 µV/K
Bandwidth	1.2 MHz
Slew Rate	500 mV/μs
Gain Bandwidth Product	1.2 MHz
Input Offset Voltage	3 mV
Input Bias Current	20 nA
Operating Temperature (Max)	70 ℃
Operating Temperature (Min)	0 ℃
Gain Bandwidth	1.2 MHz
Minimum CMRR Range	65 dB
Supply Voltage (Max)	32 V
Supply Voltage (Min)	3 V
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Size-Length	8.65 mm
Size-Width	3.91 mm
Size-Height	1.58 mm
Operating Temperature	0℃ ~ 70℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

Product Description

The LM324D is a four independent high-gain frequency-compensated Operational Amplifier IC, designed specifically to operate from a single supply or split supply over a wide range of voltages.
0.8mA Typical Low Supply-current Drain Independent of Supply Voltage
Common-mode Input Voltage Range Includes Ground, Allowing Direct Sensing Near Ground
3mV Typical, 2mV Typical A Versions Input Offset Voltage
2nA Typical Input Offset Current
20nA Typical, 15nA Typical A Versions Input Bias Current
100V/mV Typical Open-loop Differential Voltage Amplification
Internal Frequency Compensation
On Products Compliant to MIL-PRF-38535
All parameters are tested unless otherwise noted
Device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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