FDMC6679AZ - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDMC6679AZ
Manufacturer

Fairchild
ChipWorker Part#

CW47376975
Category

MOSFET, MOSFET Transistor
Package

Power-33-8
Description

Single P-Channel 30V 18mOhm 91NC 2.3W PowerTrench SMT Mosfet - SOIC-8
Documentation

Datasheet

FDMC6679AZ Global Supplier

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FDMC6679AZ Specifications

Attribute	Attribute Value

Part Number	FDMC6679AZ
Manufacturer	Fairchild
ChipWorker Part#	CW47376975
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	Power-33-8
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0086 Ω
Polarity	P-Channel
Power Dissipation	41 W
Threshold Voltage	1.8 V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Continuous Drain Current (Ids)	11.5A
Rise Time	14 ns
Input Capacitance (Ciss)	3970pF @15V(Vds)
Input Power (Max)	2.3 W
Fall Time	46 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.3W (Ta), 41W (Tc)
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Size-Length	3.3 mm
Size-Width	3.3 mm
Size-Height	0.75 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
HK STC License	NLR

Product Description

The FDMC6679AZ is a P-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) and ESD protection. It is suitable for load switch and battery pack applications.
High performance Trench technology for extremely low RDS (ON)
High power and current handling capability
8kV Typical HBM ESD protection level

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