FDMC8622 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDMC8622
Manufacturer

ON Semiconductor
ChipWorker Part#

CW77271736
Package

QFN-3
Description

MOSFET N-CH 100V 4A POWER33
Documentation

Datasheet

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FDMC8622 Specifications

Attribute	Attribute Value

Part Number	FDMC8622
Manufacturer	ON Semiconductor
ChipWorker Part#	CW77271736
Documentation	Datasheet
Number of Pins	8 Pin
Case/Package	QFN-3
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0437 Ω
Power Dissipation	2.3 W
Threshold Voltage	2.9 V
Input Capacitance	302 pF
Drain to Source Voltage (Vds)	100 V
Rise Time	1.6 ns
Input Capacitance (Ciss)	302pF @50V(Vds)
Fall Time	2.2 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2300 mW
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Size-Length	3.35 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The FDMC8622 is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for RDS (ON), switching performance and ruggedness.
High performance Trench technology for extremely low RDS (ON)
High power and current handling capability in a widely used surface-mount package
100% UIL tested

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