FDMS86200 ,MOSFET, MOSFET Transistor - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

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140 points

Part No

FDMS86200
Manufacturer

Fairchild
ChipWorker Part#

CW7105342
Category

MOSFET, MOSFET Transistor
Package

DualCool-56-8
Description

Power Field-Effect Transistor, 9.6A I(D), 150V, 0.018Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8Pin
Documentation

Datasheet
Ships from

Moscow
Наличие

15000 pcs In Stock
Estimated Price

$ 0.93

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FDMS86200 Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	FDMS86200
Manufacturer	Fairchild
ChipWorker Part#	CW7105342
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	DualCool-56-8
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.015 Ω
Polarity	N-Channel
Power Dissipation	104 W
Threshold Voltage	2.5 V
Drain to Source Voltage (Vds)	150 V
Continuous Drain Current (Ids)	9.6A
Rise Time	7.9 ns
Input Capacitance (Ciss)	2715pF @75V(Vds)
Input Power (Max)	2.5 W
Fall Time	5.8 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta), 104W (Tc)
	expand all
Size-Length	5 mm
Size-Width	6 mm
Size-Height	1.05 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

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Product Description

The FDMS86200 is a N-channel MOSFET is produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance.
Shielded gate MOSFET technology
Advanced package and silicon combination for low RDS (ON) and high efficiency
MSL1 Robust package design
100% UIL tested

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