FDP7030BL - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDP7030BL
Manufacturer

Fairchild
ChipWorker Part#

CW55315993
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

Trans MOSFET N-CH 30V 60A 3Pin(3+Tab) TO-220AB Tube
Documentation

Datasheet

FDP7030BL Global Supplier

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FDP7030BL Specifications

Attribute	Attribute Value

Part Number	FDP7030BL
Manufacturer	Fairchild
ChipWorker Part#	CW55315993
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	30.0 V
Current Rating	60.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	9 mΩ
Polarity	N-Channel
Power Dissipation	65 W
Threshold Voltage	1.9 V
Input Capacitance	1.76 nF
Gate Charge	17.0 nC
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	60.0 A
Rise Time	12 ns
Input Capacitance (Ciss)	1760pF @15V(Vds)
Input Power (Max)	60 W
Fall Time	19 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	60W (Tc)
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Size-Length	10.67 mm
Size-Width	4.83 mm
Size-Height	9.4 mm
Operating Temperature	-65℃ ~ 175℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDP7030BL is a 30V N-channel logic level PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild"s the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
Critical DC electrical parameters specified at elevated temperature
High performance trench technology for extremely low RDS (on)
175°C Rated junction temperature

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