FDS5672 - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDS5672
Manufacturer

Fairchild
ChipWorker Part#

CW10910793
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

Trans MOSFET N-CH 60V 12A 8Pin SOIC N T/R
Documentation

Datasheet

FDS5672 Global Supplier

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FDS5672 Specifications

Attribute	Attribute Value

Part Number	FDS5672
Manufacturer	Fairchild
ChipWorker Part#	CW10910793
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Voltage Rating (DC)	60.0 V
Current Rating	12.0 A
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0088 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	4 V
Input Capacitance	2.20 nF
Gate Charge	34.0 nC
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	12.0 mA
Rise Time	20 ns
Input Capacitance (Ciss)	2200pF @25V(Vds)
Input Power (Max)	2.5 W
Fall Time	14 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5 W
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDS5672 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
Low gate charge
High performance Trench technology for extremely low RDS (ON)
High power and current handling capability

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