FDS6910 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDS6910
Manufacturer

ON Semiconductor
ChipWorker Part#

CW11110326
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

Trans MOSFET N-CH 30V 7.5A 8Pin SOIC N T/R
Documentation

Datasheet

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FDS6910 Specifications

Attribute	Attribute Value

Part Number	FDS6910
Manufacturer	ON Semiconductor
ChipWorker Part#	CW11110326
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.013 Ω
Power Dissipation	1.6 W
Threshold Voltage	1.8 V
Drain to Source Voltage (Vds)	30 V
Rise Time	5 ns
Input Capacitance (Ciss)	1130pF @15V(Vds)
Input Power (Max)	900 mW
Fall Time	7 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1600 mW
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
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7.5A, 30V
RDS(ON) = 13 mΩ @ VGS = 10V
RDS(ON) = 17 mΩ @ VGS = 4.5V
Fast switching speed
Low gate charge
High performance trench technology for extremely low RDS(ON)
High power and current handling capability

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