FDS8958A ,MOSFET, MOSFET Transistor - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

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Part No

FDS8958A
Manufacturer

Fairchild
ChipWorker Part#

CW7066945
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

Trans MOSFET N/P-CH 30V 7A/5A 8Pin SOIC N T/R
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 1

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FDS8958A Specifications

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Attribute	Attribute Value

Part Number	FDS8958A
Manufacturer	Fairchild
ChipWorker Part#	CW7066945
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Current Rating	7.00 A
Power Rating	1.6 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.019 Ω
Polarity	N-Channel, P-Channel
Power Dissipation	2 W
Threshold Voltage	1.9 V
Input Capacitance	528 pF
Gate Charge	9.60 nC
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	±30.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	7.00 A
Rise Time	13.0 ns
Input Capacitance (Ciss)	575pF @15V(Vds)
Input Power (Max)	900 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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Product Description

The FDS8958A is a 30V Dual N-channel and P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild"s the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
High performance trench technology for extremely low RDS (on)
High power and current handling capability

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