FQA70N10 - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQA70N10
Manufacturer

Fairchild
ChipWorker Part#

CW11299017
Category

MOSFET, MOSFET Transistor
Package

TO-3-3
Description

N-Channel 100V 0.023Ω Through Hole Mosfet - TO-3PN
Documentation

Datasheet

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FQA70N10 Specifications

Attribute	Attribute Value

Part Number	FQA70N10
Manufacturer	Fairchild
ChipWorker Part#	CW11299017
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Voltage Rating (DC)	100 V
Current Rating	70.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.023 Ω
Polarity	N-Channel
Power Dissipation	214 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±25.0 V
Continuous Drain Current (Ids)	70.0 A
Rise Time	470 ns
Input Capacitance (Ciss)	3300pF @25V(Vds)
Input Power (Max)	214 W
Fall Time	160 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	214 W
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Size-Length	15.8 mm
Size-Width	5 mm
Size-Height	18.9 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99
HK STC License	NLR

Product Description

The FQA70N10 is a N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
100% Avalanche tested
85nC Typical low gate charge
150pF Typical low Crss

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