FQB47P06TM_AM002 ,MOSFET, MOSFET Transistor - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Popularity Score

109 points

Part No

FQB47P06TM_AM002
Manufacturer

Fairchild
ChipWorker Part#

CW14961593
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

FAIRCHILD SEMICONDUCTOR FQB47P06TM_AM002 MOSFET Transistor, P Channel, 47A, -60V, 26mohm, -10V, -4V
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 1.42

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FQB47P06TM_AM002 Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	FQB47P06TM_AM002
Manufacturer	Fairchild
ChipWorker Part#	CW14961593
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	-60.0 V
Current Rating	-47.0 A
Number of Positions	2 Position
Drain to Source Resistance (on) (Rds)	0.026 Ω
Polarity	P-Channel
Power Dissipation	160 W
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Gate to Source)	±25.0 V
Continuous Drain Current (Ids)	-47.0 A
Rise Time	450 ns
Input Capacitance (Ciss)	3600pF @25V(Vds)
Input Power (Max)	3.75 W
Fall Time	195 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.75 W
	expand all
Size-Length	10.67 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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Product Description

The FQB47P06TM_AM002 is a QFET® P-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
100% Avalanche tested
84nC Typical low gate charge
320pF Typical low Crss

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