FDS6681Z ,MOSFET, MOSFET Transistor - Fairchild
The pictures are for reference only, and the specific specifications can be found in the product manual.
Popularity Score
169 points
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Part NoFDS6681Z
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ManufacturerFairchild
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ChipWorker Part#CW9278211
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CategoryMOSFET, MOSFET Transistor
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PackageSOIC-8
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DescriptionTrans MOSFET P-CH 30V 20A 8Pin SOIC N T/R
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DocumentationDatasheet
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Ships fromMoscow
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НаличиеIn Stock
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Estimated Price$ 1.26
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FDS6681Z Specifications
Consulting Engineer >>| Attribute | Attribute Value | |
|---|---|---|
| Part Number | FDS6681Z | |
| Manufacturer | Fairchild | |
| ChipWorker Part# | CW9278211 | |
| Category | MOSFET, MOSFET Transistor | |
| Documentation | Datasheet | |
| Mounting Style | Surface Mount | |
| Number of Pins | 8 Pin | |
| Case/Package | SOIC-8 | |
| Voltage Rating (DC) | -30.0 V | |
| Current Rating | -20.0 A | |
| Number of Positions | 8 Position | |
| Drain to Source Resistance (on) (Rds) | 0.0038 Ω | |
| Polarity | P-Channel | |
| Power Dissipation | 2.5 W | |
| Threshold Voltage | 1.8 V | |
| Input Capacitance | 7.54 nF | |
| Gate Charge | 185 nC | |
| Drain to Source Voltage (Vds) | 30 V | |
| Breakdown Voltage (Gate to Source) | ±20.0 V | |
| Continuous Drain Current (Ids) | -20.0 A | |
| Rise Time | 9 ns | |
| Input Capacitance (Ciss) | 7540pF @15V(Vds) | |
| Input Power (Max) | 1 W | |
| Fall Time | 380 ns | |
| Operating Temperature (Max) | 150 ℃ | |
| Operating Temperature (Min) | -55 ℃ | |
| Power Dissipation (Max) | 2.5W (Ta) | |
| expand all | ||
| Size-Length | 5 mm | |
| Size-Width | 4 mm | |
| Size-Height | 1.5 mm | |
| Operating Temperature | -55℃ ~ 150℃ (TJ) | |
| Product Lifecycle Status | Active | |
| Packaging | Tape & Reel (TR) | |
| RoHS | RoHS Compliant | |
| Lead-Free Status | Lead Free | |
| REACH SVHC Compliance | No SVHC | |
| REACH SVHC Compliance Edition | 2015/06/15 | |
| ECCN Code | EAR99 |
Similar & Replacement Parts
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Product Description
- The FDS6681Z is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild"s the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
- Extended VGSS range (-25V) for battery applications
- HBM ESD protection level of ±3.8kV typical
- High performance trench technology for extremely low RDS (on)
- High power and current handling capability
- ESD sensitive device, take proper precaution while handling the device.
Delivery
Ordering Information
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- The tracking number will be sent to you after the order is shipped. (It may take up to 24 hours for the information to be available from the carrier.) View more > - - Carefully tested and packaged by ChipWorker- Vacuum packed - Anti-static packaging - Anti-vibration foam
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