FQPF20N06 - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQPF20N06
Manufacturer

Fairchild
ChipWorker Part#

CW13884611
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

Trans MOSFET N-CH 60V 15A 3Pin(3+Tab) TO-220F Rail
Documentation

Datasheet

FQPF20N06 Global Supplier

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FQPF20N06 Specifications

Attribute	Attribute Value

Part Number	FQPF20N06
Manufacturer	Fairchild
ChipWorker Part#	CW13884611
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	60.0 V
Current Rating	15.0 A
Power Rating	30 W
Drain to Source Resistance (on) (Rds)	60.0 mΩ
Polarity	N-Channel
Power Dissipation	30 W
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60.0 V
Breakdown Voltage (Gate to Source)	±25.0 V
Continuous Drain Current (Ids)	15.0 A
Rise Time	45 ns
Input Capacitance (Ciss)	590pF @25V(Vds)
Input Power (Max)	30 W
Fall Time	25 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	30W (Tc)
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Size-Length	10.36 mm
Size-Width	4.9 mm
Size-Height	16.07 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.
Product Highlights
15A, 60V, R
DS(on)
= 0.06
W
@V
GS
= 10 V
Low gate charge ( typical 11.5 nC)
Low Crss ( typical 25 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating

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