FQT1N60CTF_WS - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQT1N60CTF_WS
Manufacturer

Fairchild
ChipWorker Part#

CW21762273
Category

MOSFET, MOSFET Transistor
Package

TO-261-4
Description

FAIRCHILD SEMICONDUCTOR FQT1N60CTF_WS Power MOSFET, N Channel, 200mA, 600V, 9.3Ω, 10V, 4V
Documentation

Datasheet

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FQT1N60CTF_WS Specifications

Attribute	Attribute Value

Part Number	FQT1N60CTF_WS
Manufacturer	Fairchild
ChipWorker Part#	CW21762273
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-261-4
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	9.3 Ω
Polarity	N-Channel
Power Dissipation	2.1 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	0.2A
Rise Time	21 ns
Input Capacitance (Ciss)	170pF @25V(Vds)
Input Power (Max)	2.1 W
Fall Time	27 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.1W (Tc)
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.7 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The FQT1N60CTF_WS is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
Low gate charge (4.8nC)
Low Crss (3.5pF)
100% avalanche tested

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