FZT1049ATA - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FZT1049ATA
Manufacturer

Diodes
ChipWorker Part#

CW3866381
Category

BJT Transistor, BJT
Package

TO-261-4
Description

Trans GP BJT NPN 25V 5A 3000mW Automotive 4Pin(3+Tab) SOT-223 T/R
Documentation

Datasheet

FZT1049ATA Global Supplier

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FZT1049ATA Specifications

Attribute	Attribute Value

Part Number	FZT1049ATA
Manufacturer	Diodes
ChipWorker Part#	CW3866381
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Frequency	180 MHz
Voltage Rating (DC)	30.0 V
Current Rating	5.00 A
Polarity	NPN
Power Dissipation	3 W
Breakdown Voltage (Collector to Emitter)	25 V
Continuous Collector Current	5A
hFE Min	300 @1A, 2V
Input Power (Max)	2.5 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3000 mW
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Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

Do you require a transistor in your circuit operating in the high-voltage range? This NPN FZT1049ATA general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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