HGT1S10N120BNST - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

HGT1S10N120BNST
Manufacturer

Fairchild
ChipWorker Part#

CW12912921
Category

IGBT Transistor, IGBT Module
Package

TO-263-3
Description

FAIRCHILD SEMICONDUCTOR HGT1S10N120BNST IGBT Single Transistor, 35A, 2.45V, 298W, 1.2kV, TO-263AB, 3Pins
Documentation

Datasheet

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HGT1S10N120BNST Specifications

Attribute	Attribute Value

Part Number	HGT1S10N120BNST
Manufacturer	Fairchild
ChipWorker Part#	CW12912921
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	1.20 kV
Current Rating	35.0 A
Number of Positions	3 Position
Power Dissipation	298 W
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	298 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	298 W
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Size-Length	10.67 mm
Size-Width	11.33 mm
Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The HGT1S10N120BNST is a N-channel Non-punch Through (NPT) IGBT ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS and solar inverter. It is new member of the MOS gated high voltage switching IGBT family. It combines the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor.
Short-circuit rating
Avalanche rated
2.45V @ IC = 10A Low saturation voltage
140ns Fall time @ TJ = 150°C
298W Total power dissipation @ TC = 25°C

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