HIP2100IBZ - Intersil

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

HIP2100IBZ
Manufacturer

Intersil
ChipWorker Part#

CW18934303
Category

FET Driver
Package

SOIC-8
Description

Intersil HIP2100IBZ, Dual MOSFET Power Driver 2A Half Bridge, 9 → 14V, Non-Inverting, 8Pin SOIC
Documentation

Datasheet

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HIP2100IBZ Specifications

Attribute	Attribute Value

Part Number	HIP2100IBZ
Manufacturer	Intersil
ChipWorker Part#	CW18934303
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	9.00 V, 14.0 V (max)
Rise/Fall Time	10 ns
Number of Outputs	2 Output
Output Voltage	118.3 V
Output Current	2 A
Number of Positions	8 Position
Power Dissipation	1.3 W
Rise Time	20 ns
Output Voltage (Max)	12 V
Fall Time	10 ns
Fall Time (Max)	10 ns
Fall Time (Max)	10 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1300 mW
Supply Voltage	9V ~ 14V
Supply Voltage (Max)	14 V
Supply Voltage (Min)	9 V
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-40℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99
HK STC License	NLR

Product Description

The HIP2100IBZ is a 100V high frequency half bridge N-channel power MOSFET Driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Under-voltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary under-voltage of the high-side supply.
Drives N-channel MOSFET half bridge
Bootstrap supply maximum voltage to 114VDC
On-chip 1R bootstrap diode
Fast propagation times for multi-MHz circuits
Drives 1000pF load with rise and fall times typical 10ns
CMOS input thresholds for improved noise immunity
Independent inputs for non-half bridge topologies
No start-up problems
Outputs unaffected by supply glitches, HS ringing below ground or HS slewing at high dv/dt
Low power consumption
Wide supply range
Supply under-voltage protection
3R Driver output resistance
Near chip scale package footprint, which improves PCB efficiency and has a thinner profile
ESD sensitive device, take proper precaution while handling the device.

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