IHW30N120R3FKSA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IHW30N120R3FKSA1
Manufacturer

Infineon
ChipWorker Part#

CW27474561
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1200V 60A 349000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

IHW30N120R3FKSA1 Global Supplier

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IHW30N120R3FKSA1 Specifications

Attribute	Attribute Value

Part Number	IHW30N120R3FKSA1
Manufacturer	Infineon
ChipWorker Part#	CW27474561
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	349 W
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	349 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	349000 mW
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Operating Temperature	-40℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Summary of Features:
Best-in-class conduction properties in V CE(sat) and V f
Lowest switching losses, highest efficiency
T j(max) = 175°C
Soft current turn-off waveforms for low EMI
Benefits:
Lowest power dissipation
Better thermal management
Surge current capability
Lower EMI filtering requirements
Reduced system costs
Excellent quality
Highest reliability against peak currents

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