IPB015N08N5ATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPB015N08N5ATMA1
Manufacturer

Infineon
ChipWorker Part#

CW2679993
Category

MOSFET, MOSFET Transistor
Package

TO-263-7
Description

D2PAK N-CH 80V 180A
Documentation

Datasheet

IPB015N08N5ATMA1 Global Supplier

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IPB015N08N5ATMA1 Specifications

Attribute	Attribute Value

Part Number	IPB015N08N5ATMA1
Manufacturer	Infineon
ChipWorker Part#	CW2679993
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	7 Pin
Case/Package	TO-263-7
Power Rating	375 W
Number of Channels	1 Channel
Number of Positions	7 Position
Drain to Source Resistance (on) (Rds)	1.8 MΩ
Polarity	N-CH
Power Dissipation	375 W
Threshold Voltage	2.2 V
Drain to Source Voltage (Vds)	80 V
Breakdown Voltage (Drain to Source)	80 V
Continuous Drain Current (Ids)	180A
Rise Time	32 ns
Input Capacitance (Ciss)	16900pF @40V(Vds)
Fall Time	28 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	375W (Tc)
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Size-Width	9.25 mm
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status
ECCN Code	EAR99

Product Description

Summary of Features:
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 44%
Benefits:
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Target Applications:
Telecom
Server
Solar
Low voltage drives
Light electric vehicles
Adapter

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