IPB019N08N3 G - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPB019N08N3 G
Manufacturer

Infineon
ChipWorker Part#

CW50689600
Category

MOSFET, MOSFET Transistor
Package

TO-263-7
Description

Trans MOSFET N-CH 80V 180A 7Pin(6+Tab) TO-263 T/R
Documentation

Datasheet

IPB019N08N3 G Global Supplier

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IPB019N08N3 G Specifications

Attribute	Attribute Value

Part Number	IPB019N08N3 G
Manufacturer	Infineon
ChipWorker Part#	CW50689600
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	7 Pin
Case/Package	TO-263-7
Number of Positions	7 Position
Drain to Source Resistance (on) (Rds)	0.0016 Ω
Polarity	N-Channel
Power Dissipation	300 W
Threshold Voltage	2.8 V
Drain to Source Voltage (Vds)	80 V
Rise Time	73 ns
Input Capacitance (Ciss)	14200pF @40V(Vds)
Fall Time	33 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300W (Tc)
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Size-Length	10.31 mm
Size-Width	9.45 mm
Size-Height	4.57 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Summary of Features:
Optimized technology for DC-DC converters
Excellent gate charge x R DS(ON) product (FOM)
Superior thermal resistance
Dual sided cooling
Low parasitic inductance
Low profile (<0,7mm)
N-channel, normal level
100% avalanche tested
Pb-free plating; RoHS compliant
Target Applications:
Solar
Consumer
Telecom
Server
PC power
DC-DC
AC-DC
Adapter
SMPS
LED
Motor control

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