IPD30N10S3L34ATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPD30N10S3L34ATMA1
Manufacturer

Infineon
ChipWorker Part#

CW6753525
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 100V 30A
Documentation

Datasheet

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IPD30N10S3L34ATMA1 Specifications

Attribute	Attribute Value

Part Number	IPD30N10S3L34ATMA1
Manufacturer	Infineon
ChipWorker Part#	CW6753525
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0258 Ω
Polarity	N-Channel
Power Dissipation	57 W
Threshold Voltage	1.7 V
Input Capacitance	1520 pF
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	30A
Rise Time	4 ns
Input Capacitance (Ciss)	1520pF @25V(Vds)
Fall Time	3 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	57W (Tc)
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Size-Length	6.5 mm
Size-Width	6.22 mm
Size-Height	2.3 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IPD30N10S3L-34 is a N-channel enhancement-mode MOSFET with lowest switching and conduction power losses for highest thermal efficiency.
AEC-Q101 qualified
MSL1 up to 260°C peak reflow
Green device
100% Avalanche tested
Robust packages with superior quality and reliability
Optimized total gate charge enables smaller driver output stages

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