IPD35N10S3L26ATMA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPD35N10S3L26ATMA1
Manufacturer

Infineon
ChipWorker Part#

CW7405940
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 100V 35A
Documentation

Datasheet

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IPD35N10S3L26ATMA1 Specifications

Attribute	Attribute Value

Part Number	IPD35N10S3L26ATMA1
Manufacturer	Infineon
ChipWorker Part#	CW7405940
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.02 Ω
Polarity	N-Channel
Power Dissipation	71 W
Threshold Voltage	1.7 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	35A
Rise Time	4 ns
Input Capacitance (Ciss)	2700pF @25V(Vds)
Input Power (Max)	71 W
Fall Time	3 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	71W (Tc)
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IPD35N10S3L-26 is a N-channel enhancement-mode MOSFET with lowest switching and conduction power losses for highest thermal efficiency.
AEC-Q101 qualified
MSL1 up to 260°C peak reflow
Green device
100% Avalanche tested
Robust packages with superior quality and reliability
Optimized total gate charge enables smaller driver output stages

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