IPN60R3K4CEATMA1 ,High Voltage MOS Transistor - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

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Part No

IPN60R3K4CEATMA1
Manufacturer

Infineon
ChipWorker Part#

CW16796034
Category

High Voltage MOS Transistor
Package

TO-261-4
Description

SOT-223 N-CH 600V 2.6A
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 0.11

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IPN60R3K4CEATMA1 Specifications

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Attribute	Attribute Value

Part Number	IPN60R3K4CEATMA1
Manufacturer	Infineon
ChipWorker Part#	CW16796034
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-261-4
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	3.06 Ω
Polarity	N-Channel
Power Dissipation	5 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	2.6A
Rise Time	10 ns
Input Capacitance (Ciss)	93pF @100V(Vds)
Fall Time	60 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	5W (Tc)
	expand all
Size-Length	6.5 mm
Size-Width	3.5 mm
Size-Height	1.6 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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Product Description

Description:
**Cost-effective drop-in replacement for DPAK**
Infineon is growing the portfolio of CoolMOS™ CE with the SOT-223 package as a cost effective alternative to DPAK that also enables footprint reduction in some designs. The package can be placed on a typical DPAK footprint and comes with only a small compromise in thermal behavior. The SOT-223 from Infineon targets LED lighting and mobile charger applications.
Summary of Features:
Drop-in replacement for DPAK at lower cost
Space savings in designs with low power dissipation
Comparable thermal behavior to DPAK
Target Applications:
Lighting
Adapter
Consumer

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