IPP65R225C7XKSA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPP65R225C7XKSA1
Manufacturer

Infineon
ChipWorker Part#

CW14277096
Category

High Voltage MOS Transistor
Package

TO-220-3
Description

TO-220 N-CH 650V 11A
Documentation

Datasheet

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IPP65R225C7XKSA1 Specifications

Attribute	Attribute Value

Part Number	IPP65R225C7XKSA1
Manufacturer	Infineon
ChipWorker Part#	CW14277096
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	63 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.199 Ω
Polarity	N-Channel
Power Dissipation	63 W
Threshold Voltage	3.5 V
Drain to Source Voltage (Vds)	650 V
Continuous Drain Current (Ids)	11A
Rise Time	6 ns
Input Capacitance (Ciss)	996pF @400V(Vds)
Fall Time	10 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	63W (Tc)
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Size-Length	10 mm
Size-Width	4.4 mm
Size-Height	15.65 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IPP65R225C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Revolutionary best-in-class RDS (ON)
Reduced energy stored in output capacitance (EOSS)
Space saving through use of smaller packages or reduction of parts
Improved safety margin and suitable for both SMPS and Solar Inverter applications
Lowest conduction losses
Low switching losses
Better light load efficiency
Increasing power density
Outstanding CoolMOS™ quality
For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.

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