IR2184SPBF ,FET Driver - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Popularity Score

135 points

Part No

IR2184SPBF
Manufacturer

Infineon
ChipWorker Part#

CW2654714
Category

FET Driver
Package

SOIC-8
Description

600V Half Bridge Driver IC with typical 1.9A source and 2.3A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, 14 Lead PDIP.
Documentation

Datasheet
Ships from

Moscow
Наличие

3794 pcs In Stock
Estimated Price

$ 3.11

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IR2184SPBF Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	IR2184SPBF
Manufacturer	Infineon
ChipWorker Part#	CW2654714
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	10.0V (min)
Power Rating	625 mW
Rise/Fall Time	40ns, 20ns
Number of Outputs	2 Output
Output Voltage	620 V
Output Current	1.4.2.3 A
Number of Channels	2 Channel
Number of Positions	8 Position
Power Dissipation	0.625 W
Quiescent Current	1.6 mA
Rise Time	60 ns
Fall Time	35 ns
Fall Time (Max)	35 ns
Fall Time (Max)	60 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	625 mW
Supply Voltage	10V ~ 20V
Supply Voltage (Max)	20 V
Supply Voltage (Min)	10 V
	expand all
Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-40℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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Product Description

The IR2184SPBF is a high voltage high speed power MOSFET and IGBT Half-bridge Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
Tolerant to negative transient voltage DV/DT Immune
Under-voltage lockout for both channels
Matched propagation delay for both channels
Lower DI/DT gate driver for better noise immunity
Logic and power ground ±5V offset

expand all

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