IRF5210PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF5210PBF
Manufacturer

Infineon
ChipWorker Part#

CW3028040
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB P-CH 100V 40A
Documentation

Datasheet

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IRF5210PBF Specifications

Attribute	Attribute Value

Part Number	IRF5210PBF
Manufacturer	Infineon
ChipWorker Part#	CW3028040
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	200 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.06 Ω
Polarity	P-CH
Power Dissipation	200 W
Threshold Voltage	4 V
Input Capacitance	2700 pF
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	40A
Rise Time	86 ns
Input Capacitance (Ciss)	2700pF @25V(Vds)
Input Power (Max)	200 W
Fall Time	81 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200W (Tc)
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Size-Length	10.54 mm
Size-Width	4.69 mm
Size-Height	8.77 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF5210PBF is a P-channel HEXFET® Power MOSFET. This HEXFET® power MOSFET utilizes advance processing techniques to achieve extremely low 0n-resistance per silicon area.
Advanced Process Technology
New Ultra Low On-Resistance
Fast Switching
Dynamic dv/dt Rating
Fully Avalanche Rated

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