IRF530NSPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF530NSPBF
Manufacturer

Infineon
ChipWorker Part#

CW11447682
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 100V 17A
Documentation

Datasheet

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IRF530NSPBF Specifications

Attribute	Attribute Value

Part Number	IRF530NSPBF
Manufacturer	Infineon
ChipWorker Part#	CW11447682
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Rating	3.8 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.09 Ω
Polarity	N-Channel
Power Dissipation	79 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	17A
Rise Time	22 ns
Input Capacitance (Ciss)	920pF @25V(Vds)
Fall Time	25 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.8W (Ta), 70W (Tc)
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Size-Height	4.83 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF530NSPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
Advanced process technology
Ultra-low ON-resistance
Dynamic dV/dt rating
Fast switching
Fully avalanche rating

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