IRF630FP - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF630FP
Manufacturer

ST Microelectronics
ChipWorker Part#

CW64848618
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220FP N-CH 200V 9A
Documentation

Datasheet

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IRF630FP Specifications

Attribute	Attribute Value

Part Number	IRF630FP
Manufacturer	ST Microelectronics
ChipWorker Part#	CW64848618
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Polarity	N-CH
Power Dissipation	30 W
Drain to Source Voltage (Vds)	200 V
Continuous Drain Current (Ids)	9A
Rise Time	15 ns
Input Capacitance (Ciss)	700pF @25V(Vds)
Input Power (Max)	30 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	30W (Tc)
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Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Description
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
General features
■ Extremely high dv/dt capability
■ Very low intrinsic capacitances
■ Gate charge minimized
Applications
■ Switching application

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