IRF7317PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7317PBF
Manufacturer

Infineon
ChipWorker Part#

CW8856703
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC N+P 20V 6.6A/5.3A
Documentation

Datasheet

IRF7317PBF Global Supplier

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IRF7317PBF Specifications

Attribute	Attribute Value

Part Number	IRF7317PBF
Manufacturer	Infineon
ChipWorker Part#	CW8856703
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.023 Ω
Polarity	N-Channel, P-Channel
Power Dissipation	2 W
Threshold Voltage	700 mV
Drain to Source Voltage (Vds)	20 V
Continuous Drain Current (Ids)	6.6A/5.3A
Input Capacitance (Ciss)	900pF @15V(Vds)
Input Power (Max)	2 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2 W
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF7317PBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
Generation V technology
Ultra low ON-resistance
Surface-mount device
Fully avalanche rated

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