IRF7416PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7416PBF
Manufacturer

Infineon
ChipWorker Part#

CW6574852
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC P-CH 30V 10A
Documentation

Datasheet

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IRF7416PBF Specifications

Attribute	Attribute Value

Part Number	IRF7416PBF
Manufacturer	Infineon
ChipWorker Part#	CW6574852
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2.5 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.02 Ω
Polarity	P-CH
Power Dissipation	2.5 W
Threshold Voltage	1 V
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	10A
Rise Time	49 ns
Input Capacitance (Ciss)	1700pF @25V(Vds)
Input Power (Max)	2.5 W
Fall Time	60 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF7416PBF is a P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Dynamic dv/dt rating
Fully avalanche rated
Generation V technology

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