IRF8010PBF ,MOSFET, MOSFET Transistor - International Rectifier

The pictures are for reference only, and the specific specifications can be found in the product manual.

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114 points

Part No

IRF8010PBF
Manufacturer

International Rectifier
ChipWorker Part#

CW39245796
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 12Milliohms; ID 80A; TO-220AB; PD 260W; -55deg
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 0.7

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IRF8010PBF Specifications

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Attribute	Attribute Value

Part Number	IRF8010PBF
Manufacturer	International Rectifier
ChipWorker Part#	CW39245796
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	100 V
Current Rating	80.0 A
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	15 mΩ
Polarity	N-Channel
Power Dissipation	260 W
Part Family	IRF8010
Input Capacitance	3830pF @25V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	80.0 A
Rise Time	130 ns
Input Capacitance (Ciss)	3830pF @25V(Vds)
Input Power (Max)	260 W
Fall Time	120 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	260000 mW
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Size-Length	10.54 mm
Size-Width	4.4 mm
Size-Height	8.77 mm
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

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Product Description

**N-Channel Power MOSFET 80A to 99A, Infineon**
Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

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