IRFBC30APBF - VISHAY

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFBC30APBF
Manufacturer

VISHAY
ChipWorker Part#

CW33513926
Category

MOSFET, MOSFET Transistor
RoHS

Lead free / RoHS Compliant
Description

TO-220-3 N-CH 600V 3.6A 2.2Ω
Documentation

Datasheet

IRFBC30APBF Global Supplier

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IRFBC30APBF Specifications

Attribute	Attribute Value

Part Number	IRFBC30APBF
Manufacturer	VISHAY
ChipWorker Part#	CW33513926
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	2.2 Ω
Polarity	N-Channel
Power Dissipation	74 W
Threshold Voltage	4.5 V
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	3.60 A
Input Capacitance (Ciss)	510pF @25V(Vds)
Input Power (Max)	74 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	74 W
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Size-Length	10.41 mm
Size-Width	4.7 mm
Size-Height	9.01 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
Minimum Packing Quantity	50
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IRFBC30APBF is a 600V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, uninterruptible power supply and high speed power switching applications.
Low gate charge Qg results in simple drive requirement
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche voltage and current
Effective COSS specified

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