IRFH7440TRPBF ,MOSFET, MOSFET Transistor - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

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173 points

Part No

IRFH7440TRPBF
Manufacturer

Infineon
ChipWorker Part#

CW2266000
Category

MOSFET, MOSFET Transistor
Package

PQFN-8
Description

QFN N-CH 40V 159A
Documentation

Datasheet
Ships from

Moscow
Наличие

48077 pcs In Stock
Estimated Price

$ 0.19

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IRFH7440TRPBF Specifications

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Attribute	Attribute Value

Part Number	IRFH7440TRPBF
Manufacturer	Infineon
ChipWorker Part#	CW2266000
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	5 Pin
Case/Package	PQFN-8
Power Rating	104 W
Number of Channels	1 Channel
Number of Positions	5 Position
Drain to Source Resistance (on) (Rds)	0.0018 Ω
Polarity	N-Channel
Power Dissipation	104 W
Threshold Voltage	2.2 V
Input Capacitance	4574 pF
Drain to Source Voltage (Vds)	40 V
Breakdown Voltage (Drain to Source)	40 V
Continuous Drain Current (Ids)	159A
Rise Time	45 ns
Input Capacitance (Ciss)	4574pF @25V(Vds)
Fall Time	42 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	104W (Tc)
	expand all
Size-Length	6 mm
Size-Width	5 mm
Size-Height	0.83 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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Product Description

The IRFH7440TRPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for PWM inverter topologies, battery powered circuits, half-bridge and full-bridge topologies, electronic ballast applications and synchronous rectifier applications.
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability

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