IRFL4315PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFL4315PBF
Manufacturer

Infineon
ChipWorker Part#

CW11759032
Category

MOSFET, MOSFET Transistor
Package

TO-261-4
Description

SOT-223 N-CH 150V 2.6A
Documentation

Datasheet

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IRFL4315PBF Specifications

Attribute	Attribute Value

Part Number	IRFL4315PBF
Manufacturer	Infineon
ChipWorker Part#	CW11759032
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-261-4
Power Rating	2.8 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.185 Ω
Polarity	N-Channel
Power Dissipation	2.8 W
Threshold Voltage	5 V
Input Capacitance	420pF @25V
Drain to Source Voltage (Vds)	150 V
Breakdown Voltage (Drain to Source)	150 V
Continuous Drain Current (Ids)	2.6A
Rise Time	21 ns
Input Capacitance (Ciss)	420pF @25V(Vds)
Fall Time	19 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.8W (Ta)
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.8 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Rail, Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFL4315PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
Low gate to drain charge to reduce switching loss
Fully characterized capacitance and avalanche SOA
Surface mount

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