IRGP4640DPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRGP4640DPBF
Manufacturer

Infineon
ChipWorker Part#

CW10730515
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 65A 250000mW 3Pin(3+Tab) TO-247AC Tube
Documentation

Datasheet

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IRGP4640DPBF Specifications

Attribute	Attribute Value

Part Number	IRGP4640DPBF
Manufacturer	Infineon
ChipWorker Part#	CW10730515
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	250 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	250 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	89 ns
Input Power (Max)	250 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	250 W
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Size-Length	15.87 mm
Size-Width	5.31 mm
Size-Height	20.7 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRGP4640DPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features high efficiency in a wide range of applications and switching, improved reliability due to rugged hard switching performance and high power capability.
Low VCE(ON) and switching losses
Square RBSOA
Positive VCE (ON) temperature coefficient
Excellent current sharing in parallel operation
Enables short-circuit protection scheme
Environmentally-friendly
5.5µs Short-circuit SOA

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