IRFP3206PBF ,MOSFET, MOSFET Transistor - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

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160 points

Part No

IRFP3206PBF
Manufacturer

Infineon
ChipWorker Part#

CW4585553
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247AC N-CH 60V 200A
Documentation

Datasheet
Ships from

Moscow
Наличие

248 pcs In Stock
Estimated Price

$ 0.89

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IRFP3206PBF Specifications

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Attribute	Attribute Value

Part Number	IRFP3206PBF
Manufacturer	Infineon
ChipWorker Part#	CW4585553
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	280 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0024 Ω
Polarity	N-CH
Power Dissipation	280 W
Threshold Voltage	4 V
Input Capacitance	6540pF @50V
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	200A
Rise Time	82 ns
Input Capacitance (Ciss)	6540pF @50V(Vds)
Input Power (Max)	280 W
Fall Time	83 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	280000 mW
	expand all
Size-Length	15.87 mm
Size-Width	5.31 mm
Size-Height	20.7 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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Product Description

The IRFP3206PBF is a 60V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability

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