IRFR3709ZPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFR3709ZPBF
Manufacturer

Infineon
ChipWorker Part#

CW25298286
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 30V 86A
Documentation

Datasheet

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IRFR3709ZPBF Specifications

Attribute	Attribute Value

Part Number	IRFR3709ZPBF
Manufacturer	Infineon
ChipWorker Part#	CW25298286
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	79 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0065 Ω
Polarity	N-Channel
Power Dissipation	79 W
Threshold Voltage	1.8 V
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	86A
Rise Time	12 ns
Input Capacitance (Ciss)	2330pF @15V(Vds)
Input Power (Max)	79 W
Fall Time	3.9 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	79W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRFR3709ZPBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency synchronous buck converters and high frequency isolated DC-to-DC converters with synchronous rectification for telecom use.
Ultra-low gate impedance
Very low RDS (ON) at 4.5V VGS

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