IRFZ34NPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRFZ34NPBF
Manufacturer

Infineon
ChipWorker Part#

CW1681900
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 55V 29A
Documentation

Datasheet

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IRFZ34NPBF Specifications

Attribute	Attribute Value

Part Number	IRFZ34NPBF
Manufacturer	Infineon
ChipWorker Part#	CW1681900
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	56 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.04 Ω
Polarity	N-CH
Power Dissipation	68 W
Threshold Voltage	4 V
Input Capacitance	700 pF
Drain to Source Voltage (Vds)	55 V
Continuous Drain Current (Ids)	29A
Rise Time	49 ns
Reverse recovery time	57 ns
Maximum Forward Voltage (Max)	1.6 V
Input Capacitance (Ciss)	700pF @25V(Vds)
Input Power (Max)	68 W
Fall Time	40 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Junction Temperature	-55℃ ~ 175℃
Power Dissipation (Max)	68W (Tc)
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Size-Length	10.54 mm
Size-Width	4.4 mm
Size-Height	8.77 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRFZ34NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
175°C Operating temperature
Dynamic dV/dt rating
Fully avalanche rated

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