IRG4BC20KDPBF ,IGBT Transistor, IGBT Module - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

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Part No

IRG4BC20KDPBF
Manufacturer

Infineon
ChipWorker Part#

CW6314466
Category

IGBT Transistor, IGBT Module
Package

TO-220-3
Description

Trans IGBT Chip N-CH 600V 16A 60000mW 3Pin(3+Tab) TO-220AB Tube
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

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IRG4BC20KDPBF Specifications

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Attribute	Attribute Value

Part Number	IRG4BC20KDPBF
Manufacturer	Infineon
ChipWorker Part#	CW6314466
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	60 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	60 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	37 ns
Input Power (Max)	60 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	60000 mW
	expand all
Size-Length	10.54 mm
Size-Width	4.69 mm
Size-Height	8.77 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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Product Description

The IRG4BC20KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating frequency of >5kHz and short-circuit rated to 10µs at 125°C, VGE = 15V. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED™ diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses.
Latest generation 4 IGBTs offer highest power density motor controls possible
32A Pulsed collector current
10µs Short-circuit withstand time

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