IRGP6650DPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRGP6650DPBF
Manufacturer

Infineon
ChipWorker Part#

CW31492350
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 80A 306000mW 3Pin(3+Tab) TO-247AC Tube
Documentation

Datasheet

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IRGP6650DPBF Specifications

Attribute	Attribute Value

Part Number	IRGP6650DPBF
Manufacturer	Infineon
ChipWorker Part#	CW31492350
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	306 W
Number of Positions	3 Position
Power Dissipation	306 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	50 ns
Input Power (Max)	306 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	306 W
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Size-Length	15.87 mm
Size-Width	5.31 mm
Size-Height	20.7 mm
Operating Temperature	-40℃ ~ 175℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRGP6650DPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for welding and H bridge converters. It features improved reliability due to rugged hard switching performance and high power capability.
Low VCE(ON) and switching losses
Optimized diode for full bridge hard switch converters
Square RBSOA
High efficiency in a wide range of applications
Enables short-circuit protection operation
Excellent current sharing in parallel operation
Environmentally-friendly
5µs Short-circuit

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