IRL2910PBF ,MOSFET, MOSFET Transistor - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

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152 points

Part No

IRL2910PBF
Manufacturer

Infineon
ChipWorker Part#

CW8972203
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 100V 55A
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 0.92

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IRL2910PBF Specifications

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Attribute	Attribute Value

Part Number	IRL2910PBF
Manufacturer	Infineon
ChipWorker Part#	CW8972203
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	200 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.026 Ω
Polarity	N-Channel
Power Dissipation	200 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	55A
Rise Time	100 ns
Input Capacitance (Ciss)	3700pF @25V(Vds)
Fall Time	55 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200W (Tc)
	expand all
Size-Length	10.54 mm
Size-Width	4.69 mm
Size-Height	8.77 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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Product Description

The IRL2910PBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
Logic level gate drive
Advanced process technology
Dynamic dV/dt rating
Fast switching
Fully avalanche rating

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