IRL2910SPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRL2910SPBF
Manufacturer

Infineon
ChipWorker Part#

CW11096907
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

D2PAK N-CH 100V 55A
Documentation

Datasheet

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IRL2910SPBF Specifications

Attribute	Attribute Value

Part Number	IRL2910SPBF
Manufacturer	Infineon
ChipWorker Part#	CW11096907
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	3.8 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	26 mΩ
Polarity	N-CH
Power Dissipation	3.8 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	55A
Rise Time	100 ns
Input Capacitance (Ciss)	3700pF @25V(Vds)
Fall Time	55 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.8W (Ta), 200W (Tc)
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Size-Length	10.67 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRL2910SPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
Logic level gate drive
Advanced process technology
Dynamic dV/dt rating
Fully avalanche rating

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