IRLB8721PBF ,MOSFET, MOSFET Transistor - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

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173 points

Part No

IRLB8721PBF
Manufacturer

Infineon
ChipWorker Part#

CW2881008
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 30V 62A
Documentation

Datasheet
Ships from

Moscow
Наличие

5 pcs In Stock
Estimated Price

$ 0.42

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IRLB8721PBF Specifications

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Attribute	Attribute Value

Part Number	IRLB8721PBF
Manufacturer	Infineon
ChipWorker Part#	CW2881008
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	65 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0065 Ω
Polarity	N-CH
Power Dissipation	65 W
Threshold Voltage	1.8 V
Input Capacitance	1077 pF
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	62A
Rise Time	93 ns
Input Capacitance (Ciss)	1077pF @15V(Vds)
Fall Time	17 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	65W (Tc)
	expand all
Size-Length	10.67 mm
Size-Width	4.83 mm
Size-Height	9.02 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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Product Description

The IRLB8721PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high frequency synchronous buck, converters for computer processor power, optimized for UPS/inverter applications, high frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use.
Very low RDS (ON) at 4.5V VGS
Ultra low gate impedance
Fully characterized capacitance and avalanche voltage and current

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